Seminars

Resistive switching (RS) refers to the reversible change of the resistance of a nanometer sized media by the application of electrical pulses. Many physical processes matching this concept have been identified, ranging from the controlled re-localization of ion vacancies in oxide matrices to the electric-field-induced metal-to-insulator transition in Mott insulators.

Devices based on this phenomena are making huge impact in two applicative fields, nonvolatile electronic memory devices and neuromorphic systems. Indeed, resistive random-access memories (ReRAM) is becoming one of the promising candidates to substitute for the standard memory technologies in the near future. Regarding neuromorphic engineering, RS devices might be a very efficient building block when it comes to the implementation of spiking neural networks.

In this talk, we will review the basic concepts behind RS and introduce our RS devices. Two of our applicative research lines will be presented as well.

References:

Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit
Stoliar P, et al. IEEE Transactions on Circuits and Systems II 61, 21 (2014)

Universal electric-field-driven resistive transition in narrow gap Mott insulators
Stoliar P, et al. Adv. Mater. 25, 3222 (2013)

Resistive switching dependence on atomic layer deposition parameters in HfO 2-based memory devices
Zazpe R, et al. J. Mater. Chem. C 2, 3204 (2014)

Control the resistive switching in AM4Q8 narrow gap Mott insulators: a first step towards neuromorphic applications
Tranchant J, et al. Phys. Status Solidi A. (2014)

Building memristive and radiation hardness TiO2-based junctions.
Ghenzi N, et al. Thin Solid Films 550, 683 (2014)

Non-Hebbian Learning Implementation in Light-Controlled Resistive Memory Devices
Ungureanu M, et al. PLoS ONE 7, e52042 (2013)

"Resistive switching: from devices to applications"