"Graphene-metal Interaction Revealed by Scanning Tunneling Microscopy "

Who: Hyowon Kim, (Samsung Adv. Inst. of Technology (SAIT) , KOREA)

Place: Donostia International Physics Center (DIPC). Paseo Manuel de Lardizabal, 4, Donostia

Date: Monday, 16 March 2015, 12:00

Graphene-metal Interaction Revealed by Scanning Tunneling Microscopy

Hyo Won Kim

Samsung Advanced Institute of Technology, Suwon 443-803, Korea

Graphene is a promising building block for future electronic devices but actualizing this
enormous promise and realizing graphene-based devices requires a thorough understanding
of how the contact between graphene and the underlying metal substrate affects the electronic
properties of graphene. Metallic contacts to graphene are known to influence doping and can
result in the opening of a band gap, which in turn significantly modifies the transport
properties. The electronic properties of graphene on metal substrates also strongly depend on
the nature of the graphene?metal interaction. Here, I present the graphene-metal interactions
revealed by various scanning tunneling microscopic and spectroscopic studies such as the
electron confinement in graphene nanoislands grown on a Pt(111) substrate [1], strong
interaction between a graphene edge and the underlying metal [2], and the phonon excitations
in graphene controlled by the interaction strength between the graphene and the underlying
metal [3].

[1] H. W. Kim, et al. Electron Confinement in Graphene Nanoislands with Free-electron-like Energy Dispersion,
to be submitted.
[2] H. W. Kim, et al. Strong Interaction between Graphene edge and metal revealed by scanning tunneling
microscopy, Carbon, 78, 190 (2014).
[3] H. W. Kim, et al. Nanoscale Control of Phonon Excitations in Graphene, submitted.

(host Nicolas Lorente)

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